Description of electron mobilities in epitaxial lanthanum-doped barium stannate films: Influences of LO phonons, threading dislocation, and ionized donor defects

Lanthanum-doped barium stannate (La-doped BaSnO3 or LBSO) has attracted the attention of researchers and engineers because its wide range potential applications in electronic optoelectronic devices. This is due to a combination exceptional room temperature (RT) mobility 320 cm2 V−1 s−1 high visible transparency. However, epitaxial LBSO films made using strategic deposition techniques such as molecular beam epitaxy, pulsed laser deposition, magnetron sputtering show comparatively low RT mobilities, between 24 183 s−1, an accurate description these mobilities still sought. Herein, we provide underlying scattering mechanisms related longitudinal optical (LO) phonons, threading dislocation, ionized donor defects elucidate films. It was found that total estimated Matthiessen's rule provided strong quantitative agreement with experimental results. The large polaron based on LO phonon dominated whole spectrum electron concentrations this system. upper bound mobility, i.e., limit attained at s−1. calculated associated dislocation scatterings adequately verified results 150 predicted for all three types were predominant data less than These investigations deepen our understanding governing charge transport pave way development novel semiconductor thin use